A Wideband CMOS/GaAs HBT Envelope Tracking Power Amplifier for 4G LTE Mobile Terminal Applications

A high-efficiency envelope tracking power amplifier for long-term evolution (LTE) handset mobile terminals is presented. The envelope amplifier consists of a wideband buffered linear amplifier as a voltage source and a hysteretically controlled switching amplifier as a dependent current source. The...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2012-05, Vol.60 (5), p.1321-1330
Main Authors: Hassan, M., Larson, L. E., Leung, V. W., Kimball, D. F., Asbeck, P. M.
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Circuit properties
Delay
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Envelope shaping
envelope tracking (ET)
Envelopes
Exact sciences and technology
Gallium arsenide
Gallium arsenides
Integrated circuits
long-term evolution (LTE)
polar transmitter
Power amplifiers
Power generation
Radio frequency
Radiocommunications
Resistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors
Strontium
Switches
Telecommunications
Telecommunications and information theory
Tracking
Transmitters. Receivers
Wideband
Wireless communication
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Summary:A high-efficiency envelope tracking power amplifier for long-term evolution (LTE) handset mobile terminals is presented. The envelope amplifier consists of a wideband buffered linear amplifier as a voltage source and a hysteretically controlled switching amplifier as a dependent current source. The linear amplifier has a high current drive capability of approximately 500 mA while consuming only 12 mA of quiescent current. The impact of envelope shaping on system efficiency and stability is investigated. The envelope amplifier is implemented in a 0.15- μm CMOS process and tested with a GaAs HBT RF power amplifier. For a 20-MHz LTE signal with 6.6-dB peak-to-average power ratio, an overall efficiency of 43% is achieved at 29-dBm RF output power level with relative constellation error below 1.9% after digital pre-distortion.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2012.2187537