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Interference Signal Effects on a High-Frequency Monolithic Voltage-Controlled Oscillator: Experiments and Simulations

This paper reflects a part of electromagnetic susceptibility studies conducted on active circuits. An electromagnetic interference (EMI) is injected on a 5 GHz monolithic voltage-controlled oscillator (VCO). This circuit is implemented on a 0.35 μm BiCMOS SiGe process. Injection locking and pulling...

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Bibliographic Details
Published in:IEEE transactions on electromagnetic compatibility 2014-02, Vol.56 (1), p.51-59
Main Authors: Raoult, Jeremy, Blain, Amable, Doridant, Adrien, Jarrix, Sylvie
Format: Article
Language:English
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Summary:This paper reflects a part of electromagnetic susceptibility studies conducted on active circuits. An electromagnetic interference (EMI) is injected on a 5 GHz monolithic voltage-controlled oscillator (VCO). This circuit is implemented on a 0.35 μm BiCMOS SiGe process. Injection locking and pulling are put in evidence when the circuit is subject to a high frequency interference with possible frequency band widened with respect to the oscillation frequency band of the VCO. A simulation process based on envelope-transient method is presented. Its main goal is to predict the behavior of the VCO under injection with interference signal power ranging from low to high level.
ISSN:0018-9375
1558-187X
DOI:10.1109/TEMC.2013.2271792