Isotope Effect in Electrical Characteristics of Polysilicon Based-Photodetector

The electrical conduction of polysilicon can be improved through the passivation of defects located at grain boundaries. Most passivation proceeds by hydrogen bonding to dangling bonds of silicon. However, more research is needed on the reliability of the Si-H bond. A process using deuterium instead...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-07, Vol.70 (7), p.3656-3660
Main Author: Lee, Jae-Sung
Format: Article
Language:English
Subjects:
Annealing
Annealing furnaces
Crystal defects
Deuterium
Electrical conduction
Grain boundaries
Grain boundary
Grain structure
Hydrogen
Hydrogen bonding
Hydrogen bonds
Ion implantation
Isotope effect
Passivation
Passivity
Photoconductivity
photodetector
Photometers
Polysilicon
Reliability
Sensitivity
Silicon
Silicon devices
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Summary:The electrical conduction of polysilicon can be improved through the passivation of defects located at grain boundaries. Most passivation proceeds by hydrogen bonding to dangling bonds of silicon. However, more research is needed on the reliability of the Si-H bond. A process using deuterium instead of hydrogen can be expected to improve the performance of silicon devices because Si-D bonds have much higher stability than Si-H bonds. In this study, we have investigated how the isotope effect appears in polysilicon applications. For this purpose, a photodetector composed of a polysilicon film incorporated with hydrogen or deuterium was prepared, and then, current-voltage ( {I} - {V} ) characteristics, photo response, and degradation thereof were investigated. Hydrogen and deuterium incorporation was performed by both furnace annealing and ion implantation methods. It was found that in order for the isotope effect to occur in polysilicon grain structure, the density of grain boundary must be maintained properly, and there must be no additional damage during the hydrogen or deuterium process. Through this study, it was confirmed that the electrical characteristics and the reliability of the polysilicon based-photodetector were improved by forming a Si-D bond inside the polysilicon with the furnace annealing.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3276727