Reliability of Multiple-Layer Stacked Gate-All-Around Poly-Si Nanosheet Channel Ferroelectric Hf x Zr 1-x O 2 FETs With NH 3 Plasma Treatment

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2023-07, Vol.70 (7), p.3915-3920
Main Authors: Hsieh, Dong-Ru, Lee, Chia-Chin, Hong, Tzu-Chieh, Yeh, Wei-Ju, Chao, Tien-Sheng
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3274610