Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT

A novel 850-V silicon-on-insulator (SOI) lateral insulated gate bipolar transistor with unipolar conductivity enhancement (UE LIGBT) is proposed and experimentally realized in this article. A thick SOI region with charge-balanced n-and p-pillars is introduced near the cathode of the UE LIGBT to enha...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-04, Vol.70 (4), p.1-6
Main Authors: Zhang, Wentong, Tang, Ning, Liu, Yuting, Yu, Yang, He, Nailong, Zhang, Sen, Qiao, Ming, Li, Zhaoji, Zhang, Bo
Format: Article
Language:English
Subjects:
Anodes
Breakdown
Carrier density
Cathodes
Charge carrier processes
Conduction capability
Conductivity
Current carriers
Doping
Insulated gate bipolar transistors
lateral insulated gate bipolar transistor (LIGBT)
Majority carriers
ON-state voltage drop
Semiconductor devices
Silicon-on-insulator
SOI (semiconductors)
Switches
thin silicon-on-insulator (SOI)
unipolar conductivity enhancement (UE)
Voltage drop
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Summary:A novel 850-V silicon-on-insulator (SOI) lateral insulated gate bipolar transistor with unipolar conductivity enhancement (UE LIGBT) is proposed and experimentally realized in this article. A thick SOI region with charge-balanced n-and p-pillars is introduced near the cathode of the UE LIGBT to enhance the conductivity by high concentration charge-balanced majority carriers. A normalized conductivity factor \eta_{\text{c}} is proposed to evaluate the conductivity enhancement of the new device, based on which the unipolar conductivity region is optimized to reduce the ON-state voltage drop \textit{V}_{\biosc{on}} while keeping the similar turn-off loss and breakdown voltage \textit{V}_{\text{B}} . The experiments demonstrated that \textit{V}_{\biosc{on}} and conduction capability of the UE LIGBT are improved by 16.7% and 38.9% when compared with the conventional LIGBT (Con LIGBT) under the same breakdown voltage \textit{V}_{\text{B}} of 850 V.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3249140