Electrolithic Memory: A New Device for Ultrahigh-Density Data Storage

We propose a storage memory device that enables bit densities of >1 Tbit/mm 2 based on the electro- deposition and electrodissolution of multilayered metal stacks in deep nanometer-sized wells. This device addresses the challenge of bit density scaling slowdown expected for 3-D NAND flash beyond...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-05, Vol.69 (5), p.2377-2383
Main Authors: Fransen, Senne, Willems, Kherim, Philipsen, Harold, Verreck, Devin, Van Roy, Willem, Henry, Olivier Y. F., Arreghini, Antonio, Van den bosch, Geert, Furnemont, Arnaud, Rosmeulen, Maarten
Format: Article
Language:English
Subjects:
Ash
Bandwidth
Data storage
Density
Deposition
Dissolution
Electric potential
Electrodes
Electrodissolution
Electrolytes
High-density data storage
Ions
Mathematical analysis
Metals
nonvolatile memory
post-NAND technology
Response time
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Summary:We propose a storage memory device that enables bit densities of >1 Tbit/mm 2 based on the electro- deposition and electrodissolution of multilayered metal stacks in deep nanometer-sized wells. This device addresses the challenge of bit density scaling slowdown expected for 3-D NAND flash beyond 2030. We describe in detail the operating principles and discuss the response time, bandwidth, retention, and cycling endurance requirements for the device to be viable. As a proof-of-principle, we provide a first demonstration of the write/read (W/R) mechanism on millimeter- and micrometer-sized electrodes and show the device's potential for reaching very high bit densities. To evaluate how the response time scales for the envisioned nanometer-sized electrodes, we derive simple analytical expressions based on finite element simulations that relate the well depth, radius, and electrolyte composition to the deposition/dissolution rate.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3162176