Investigation of Two Bits With Multistate Antifuse on nMOS Poly-Silicon Junctionless GAA OTP

One-time programmable (OTP) memory is essential to the security and gaming industries because of its "write once, read many" capability. This device supports N-metal-oxide-semiconductor polycrystalline-silicon junctionless gate-all-around (GAA) nanowire transistor technology and can perfor...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-12, Vol.68 (12), p.6118-6123
Main Authors: Chang, Chen-Feng, Shen, Chiuan-Huei, Hsieh, Dong-Ru, Lu, Zong-Han, Lin, Cheng-Chen, Chao, Tien-Sheng
Format: Article
Language:English
Subjects:
3-D IC
antifuse
Antifuses
Breakdown
Breakdown voltage
Electric breakdown
Gallium arsenide
gate-all-around (GAA)
junctionless transistor
Logic gates
Metal oxide semiconductors
Monitoring
MOS devices
multistate
nanowire
Nanowires
nMOS
one-time programmable (OTP) memory
Performance evaluation
poly-si
Silicon
Transistors
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Summary:One-time programmable (OTP) memory is essential to the security and gaming industries because of its "write once, read many" capability. This device supports N-metal-oxide-semiconductor polycrystalline-silicon junctionless gate-all-around (GAA) nanowire transistor technology and can perform multistate antifuse. It is capable of functioning in four states instead of in the standard two states (open/short). Furthermore, the states can be read as fully open (0, 0), drain-gate breakdown (0, 1), source-gate breakdown (1, 0), and full breakdown (1, 1) states. The antifuse is formed from the oxide breakdown between the gate and the source or drain (S/D). Moreover, because multiple samples have been successfully produced, its information can be displayed as a chart or table to instantly convey information about the current device's state to programmers by reading the S/D current.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3122885