Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs

We have investigated the impact of relative gate position between source and drain on the DC and RF characteristics for AlGaN/GaN high electron mobility transistors. Devices with fixed source drain separation ( {L}_{\text {SD}} ) of 5~\mu \text {m} , width ( {W} ) of {2}\times {50}\,\,\mu \text {m...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2020-10, Vol.67 (10), p.4141-4146
Main Authors: Yadav, Yogendra K., Upadhyay, Bhanu B., Jha, Jaya, Ganguly, Swaroop, Saha, Dipankar
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitride
Aluminum gallium nitrides
current gain cutoff frequency (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">f T)
electric field
Gallium nitrides
gate–drain spacing
HEMTs
high electron mobility transistor (HEMT)
High electron mobility transistors
Logic gates
MODFETs
ON-resistance
output power density (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">P out) and breakdown voltage
Performance evaluation
Radio frequency
Semiconductor devices
Separation
source-gate spacing
Transconductance
Wide band gap semiconductors
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Summary:We have investigated the impact of relative gate position between source and drain on the DC and RF characteristics for AlGaN/GaN high electron mobility transistors. Devices with fixed source drain separation ( {L}_{\text {SD}} ) of 5~\mu \text {m} , width ( {W} ) of {2}\times {50}\,\,\mu \text {m} and gate length ( {L}_{G} ) of 200 nm are fabricated and characterized. The relative position of the gate is varied with constant {L}_{\text {SD}} . The value of saturation drain current ( {I}_{\text {DS},\text {sat}} ) and maximum transconductance ( {g}_{m,\text {max}} ) change from 740 mA/mm and 168 mS/mm for gate to source separation ( {L}_{\text {GS}} ) of 3.8~\mu \text {m} to 1071 mA/mm and 245 mS/mm for {L}_{\text {GS}} = {0.25}\,\,\mu \text {m} , respectively. The corresponding breakdown voltage ( {V}_{\text {br}} ) significantly improves from 65 V (for {L}_{\text {GS}} = {3.8}\,\,\mu \text {m} ) to 189 V (for {L}_{\text {GS}} = {0.25}\,\,\mu \text {m} ). The unity current gain frequency ( {f}_{T} ) is observed to remain constant at 55 GHz for all positions of the gate. However, output power density is found to increase from 3.8 to 5.1 W/mm for the same relative change in the gate position.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.3019359