Research of Single-Event Burnout in 4H-SiC JBS Diode by Low Carrier Lifetime Control

This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in 4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the first time. We investigate the SEB performance based on an 1800-V JBS structure and find that the most sensitive ion&#...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2018-12, Vol.65 (12), p.5434-5439
Main Authors: Yu, Cheng-Hao, Wang, Ying, Li, Xing-Ji, Liu, Chao-Ming, Luo, Xin, Cao, Fei
Format: Article
Language:English
Subjects:
2-D numerical simulation
Carrier lifetime
Computer simulation
Electric contacts
Electric fields
Ions
junction barrier Schottky (JBS) diode
Junctions
Linear energy transfer (LET)
low carrier lifetime control (LCLC)
Radiation effects
Schottky diodes
Silicon carbide
single-event burnout (SEB)
Temperature distribution
Threshold voltage
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Summary:This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in 4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the first time. We investigate the SEB performance based on an 1800-V JBS structure and find that the most sensitive ion's strike position is the middle of junction spacing because of the punchthrough of the electric field at anode contact. Then, the SEB hardening mechanism of LCLC is studied in this paper that the double-sided peak electric field can be effectively improved which results in a significantly decrease of maximal temperature. For the incident particle with different linear energy transfer values, we find that the SEB threshold voltage can be substantially enhanced when the carrier lifetime ( \tau ) is under a certain value. In addition, the basic characteristics with LCLC are discussed that the forward and reversed characteristics are hardly affected.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2872170