Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress e...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-10, Vol.64 (10), p.4050-4056
Main Authors: Hajlasz, Marcin, Donkers, Johan J. T. M., Pandey, Saurabh, Hurkx, Fred, Hueting, Raymond J. E., Gravesteijn, Dirk J.
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Aluminum gallium nitrides
Barriers
Capping
Chemical reactions
Contact stresses
diode
Electric contacts
Electrical properties
Gallium nitride
Gallium nitrides
Nickel
Schottky barrier height (SBH)
Schottky barriers
Schottky diodes
Secondary ion mass spectroscopy
strain
Stress
Transmission electron microscopy
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Summary:In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2742991