Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

In this study, N-type amorphous indium zinc oxide thin-film transistors are fabricated and temperature-dependent electrical characteristics in the range of 170-295 K are analyzed through experimental measurements and using an equivalent-circuit model. In this model, thermionic field emission for rev...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-08, Vol.64 (8), p.3183-3188, Article 3183
Main Authors: Heo, Keun, Cho, Kyung-Sang, Choi, Jun Young, Han, Sangmin, Yu, Yun Seop, Park, Yonmook, Yoo, Gwangwe, Park, Jin-Hong, Hwang, Sung Woo, Lee, Sang Yeol
Format: Article
Language:English
Subjects:
Barrier height
Electrical resistance measurement
Electrodes
indium zinc oxide
Integrated circuit modeling
Logic gates
modeling
Schottky diode
temperature dependence
Temperature measurement
Thin film transistors
thin-film transistor (TFT)
Zinc oxide
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Summary:In this study, N-type amorphous indium zinc oxide thin-film transistors are fabricated and temperature-dependent electrical characteristics in the range of 170-295 K are analyzed through experimental measurements and using an equivalent-circuit model. In this model, thermionic field emission for reverse bias and a thermionic emission mechanism for forward bias are applied. The barrier height coefficient of a contact region between the channel and the Ti/Au electrode is 1.26 meV/K, and the resistance of the channel material decreases at a rate of -0.39Ω · K -1 at various temperatures. The obtained energy level is experimentally confirmed through a Kelvin probe measurement. In addition, the simulation results of the channel resistance successfully describe the Arrhenius behavior of the drain current and the Mott variable-range hopping conduction mechanism in a low-temperature regime below 230 K.
ISSN:0018-9383
1557-9646
1557-9646
DOI:10.1109/TED.2017.2717935