A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction

In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns a stacked source configuration consisting of an upper source layer with a relatively larger bandgap material and an underlying source la...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-12, Vol.63 (12), p.5072-5076
Main Authors: Wu, Chunlei, Huang, Qianqian, Zhao, Yang, Wang, Jiaxin, Wang, Yangyuan, Huang, Ru
Format: Article
Language:English
Subjects:
Band-to-band tunneling (BTBT)
Configuration management
Degradation
Energy gap
Field effect transistors
Germanium
heterostructure
Leakage current
Nanoelectronics
Photonic band gap
Silicon
subthreshold slope
TFETs
tunnel FET (TFET)
Tunneling
Tunnels
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Summary:In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns a stacked source configuration consisting of an upper source layer with a relatively larger bandgap material and an underlying source layer with smaller bandgap materials. Since smaller bandgap materials exhibit much higher band-to-band tunneling efficiency, the underlying layer of HS-TFET could provide extra drain current increment with increasing gate voltage, and thus effectively improve the subthreshold characteristics for steeper average SS. The simulation results show that the proposed Si-Ge-based HS-TFET can achieve much steeper average SS (25 mV/decade) than conventional Si TFET (42 mV/decade), exhibiting more than one decade higher I60 without leakage current degradation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2619694