Identifying a Double-Energy-Level Trap Center in a GaN HEMT by Performing Three-Stage Pulse Measurements

The results of measurements performed on a GaN high electron-mobility transistor (HEMT) by two different pulse-measurement techniques are presented. By performing two-stage pulse measurements, two distinct current-injection mechanisms responsible for triggering the trapping process are identified. B...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2016-09, Vol.63 (9), p.3693-3699
Main Authors: Albahrani, Sayed Ali, Parker, Anthony E., Heimlich, Michael
Format: Article
Language:English
Subjects:
Charge trapping
Current measurement
Devices
Electron traps
Energy levels
Energy states
GaN high electron-mobility transistor (HEMT)
HEMTs
High electron mobility transistors
interaction mechanism
microwave FET
Pulse measurements
semiconductor device measurement
Semiconductor devices
Transistors
Trapping
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The results of measurements performed on a GaN high electron-mobility transistor (HEMT) by two different pulse-measurement techniques are presented. By performing two-stage pulse measurements, two distinct current-injection mechanisms responsible for triggering the trapping process are identified. By performing three-stage pulse measurements, the trap center at which the trapping process occurs is identified to be a double-energy-level trap center, which is a trap center with two distinct energy levels between which there is an interaction. This result has a significant impact on the design of more accurate large signal models for GaN HEMTs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2593906