Intrinsic Photoconductive Switches Based on Semi-Insulator 4H-SiC

A high-purity semi-insulator 4H-SiC intrinsic photoconductive switch is presented. The photoconductive semiconductor switch device is fabricated as lateral structures with the electric contact on the same side. The effect of the SiO 2 passivation layer has been investigated on the breakdown voltage....

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-04, Vol.63 (4), p.1582-1586
Main Authors: Jiang, Shuqing, Song, Chaoyang, Zhang, Liuqiang, Zhang, Yuming, Huang, Wei, Guo, Hui
Format: Article
Language:English
Subjects:
Capacitors
Optical switches
Passivation
photoconducting devices
Photoconductivity
Resistance
Resistors
Silicon carbide
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Summary:A high-purity semi-insulator 4H-SiC intrinsic photoconductive switch is presented. The photoconductive semiconductor switch device is fabricated as lateral structures with the electric contact on the same side. The effect of the SiO 2 passivation layer has been investigated on the breakdown voltage. The minimum ON-state resistance is 16 Ω, and the breakdown voltage is 11 kV. A new phenomenon that two steps exist on the rising edge of the photocurrent is observed, and a model of resistor and capacitor in parallel is built to explain it.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2526642