101-GHz InAlN/GaN HEMTs on Silicon With High Johnson's Figure-of-Merit

In this brief, the InAlN/GaN high-electron mobility transistors (HEMTs) on silicon substrate with high Johnson's figure-of-merit (J-FOM) are presented. A trilayer photoresist of polymethylmethacrylate (PMMA)/copolymer/PMMA associated with a T-shaped gate is used to reduce the parasitic resistan...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2015-08, Vol.62 (8), p.2675-2678
Main Authors: Chuan-Wei Tsou, Chen-Yi Lin, Yi-Wei Lian, Hsu, Shawn S. H.
Format: Article
Language:English
Subjects:
Gallium nitride
Gallium nitride (GaN)
HEMTs
high-electron mobility transistors (HEMTs)
InAlN
Johnson's figure-of-merit (J-FOM)
Logic gates
MODFETs
Silicon
Substrates
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Summary:In this brief, the InAlN/GaN high-electron mobility transistors (HEMTs) on silicon substrate with high Johnson's figure-of-merit (J-FOM) are presented. A trilayer photoresist of polymethylmethacrylate (PMMA)/copolymer/PMMA associated with a T-shaped gate is used to reduce the parasitic resistance while maintaining high current gain cutoff frequency. The small dc-to-RF transconductance dispersion of only 1.1% suggests a good quality SiNx passivation layer, and the f MAX of 101 GHz and f T of 60 GHz can be simultaneously obtained with a 0.11-μm foot length and 1.5-μm source-drain distance. In addition, the three-terminal OFF-state breakdown measurements reveal a source-drain breakdown voltage (BV DS ) of 21 V (V DG = 31 V). The results lead to a high J-FOM of 1.3 THz · V, which has not been reported for the InAlN/GaN HEMTs on silicon substrate.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2015.2439699