A Thermal Isolation Technique Using Through-Silicon Vias for Three-Dimensional ICs

This brief proposes a guard ring using through-silicon vias (TSVs) to isolate thermal coupling in a 3-D integrated circuit (3-D IC). To verify this idea, simulation and measurement are carried out. A ring oscillator (RO) is implemented in a 65-nm CMOS and then measured in four different conditions....

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-03, Vol.60 (3), p.1282-1287
Main Authors: Sanming Hu, Hoe, Yen Yi Germaine, Hongyu Li, Dan Zhao, Jinglin Shi, Yong Han, Keng Hwa Teo, Yong Zhong Xiong, Jin He, Xiaowu Zhang, Minkyu Je, Madihian, M.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Couplings
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Guard ring
Heating
Integrated circuit modeling
Integrated circuits
Metals
Oscillators
Oscillators, resonators, synthetizers
ring oscillator (RO)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
thermal isolation
three-dimensional integrated circuit (3-D IC)
through-silicon via (TSV)
Through-silicon vias
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Summary:This brief proposes a guard ring using through-silicon vias (TSVs) to isolate thermal coupling in a 3-D integrated circuit (3-D IC). To verify this idea, simulation and measurement are carried out. A ring oscillator (RO) is implemented in a 65-nm CMOS and then measured in four different conditions. The results show that, without affecting the inherent electrical performance of the RO, the designed TSV ring shields the RO from high-temperature environments. The oscillation frequency shifting is mitigated from 5.96 MHz without TSV to 2.11 MHz with the proposed TSV ring. This TSV-based structure provides a good option to alleviate thermal coupling in a highly integrated 3-D IC.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2243452