Impact Ionization in InAs Electron Avalanche Photodiodes

A systematic study of impact ionization, avalanche multiplication, and excess noise in InAs diodes has been carried out, confirming that avalanche multiplication is dominated by the impact ionization of electrons. This results in highly desirable "electron avalanche photodiode" characteris...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-10, Vol.57 (10), p.2631-2638
Main Authors: Marshall, Andrew R J, David, John P R, Chee Hing Tan
Format: Article
Language:English
Subjects:
Applied sciences
Avalanche diodes
Avalanche photodiode (APD)
Cadmium compounds
Diodes
Electron avalanche
electron avalanche photodiode (e-APD)
Electronics
Exact sciences and technology
Impact ionization
InAs
Indium arsenides
Ionization
ionization coefficient
Materials
Multiplication
Noise
Optoelectronic devices
P-i-n diodes
Photodiodes
Photonic band gap
Pollution measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A systematic study of impact ionization, avalanche multiplication, and excess noise in InAs diodes has been carried out, confirming that avalanche multiplication is dominated by the impact ionization of electrons. This results in highly desirable "electron avalanche photodiode" characteristics previously only demonstrated in HgCdTe diodes, which are discussed in detail. The suppression of excess noise by nonlocal effects, to levels below the local model minimum of F = 2, is explained. An electron ionization coefficient is calculated and shown to be capable of modeling the electron impact ionization, which differs characteristically from that in wider bandgap III-V materials.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2058330