Analysis of Centers in Ultrathin Hafnium Silicate Gate Stacks

A "kink" in the capacitance-voltage (C-V) characteristics of MOS capacitors with an ultrathin interfacial layer of 7-8 ¿ in a hafnium silicate gate dielectric is analyzed via high-low frequency C-V and quantum-mechanical calculations. Hole and electron traps (amphoteric) with energy levels...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-09, Vol.54 (9), p.2551-2555
Main Authors: Sicre, S.B.F., De Souza, M.M.
Format: Article
Language:English
Subjects:
Capacitance
Dielectrics
Frequency measurement
Hafnium
high- k
Interface states
Logic gates
Temperature measurement
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Summary:A "kink" in the capacitance-voltage (C-V) characteristics of MOS capacitors with an ultrathin interfacial layer of 7-8 ¿ in a hafnium silicate gate dielectric is analyzed via high-low frequency C-V and quantum-mechanical calculations. Hole and electron traps (amphoteric) with energy levels determined at Ev+0.44 eV and Ev+0.89 eV are surmised to be P b1 and P b0 centers, respectively. Of these two defects, those in the lower half of the bandgap cause an asymmetric kink in the C-V characteristics that can further be attributed to an additional level at Ev+0.32 eV, corresponding to centers. With reducing temperatures, the peaks move toward the band edge with increasing magnitude, consistent with multiphonon emission models of capture behavior.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.902238