Loading…
Analysis of Centers in Ultrathin Hafnium Silicate Gate Stacks
A "kink" in the capacitance-voltage (C-V) characteristics of MOS capacitors with an ultrathin interfacial layer of 7-8 ¿ in a hafnium silicate gate dielectric is analyzed via high-low frequency C-V and quantum-mechanical calculations. Hole and electron traps (amphoteric) with energy levels...
Saved in:
Published in: | IEEE transactions on electron devices 2007-09, Vol.54 (9), p.2551-2555 |
---|---|
Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | A "kink" in the capacitance-voltage (C-V) characteristics of MOS capacitors with an ultrathin interfacial layer of 7-8 ¿ in a hafnium silicate gate dielectric is analyzed via high-low frequency C-V and quantum-mechanical calculations. Hole and electron traps (amphoteric) with energy levels determined at Ev+0.44 eV and Ev+0.89 eV are surmised to be P b1 and P b0 centers, respectively. Of these two defects, those in the lower half of the bandgap cause an asymmetric kink in the C-V characteristics that can further be attributed to an additional level at Ev+0.32 eV, corresponding to centers. With reducing temperatures, the peaks move toward the band edge with increasing magnitude, consistent with multiphonon emission models of capture behavior. |
---|---|
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2007.902238 |