A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: Small-signal analysis

We present a new approach to model nonquasi-static (NQS) effects in a MOSFET in a small-signal situation. The model derived here is based on the large-signal NQS model previously proposed. The derivation of the small-signal model is presented. The small-signal parameters obtained with this model pro...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2003-12, Vol.50 (12), p.2401-2407
Main Authors: Roy, A.S., Vasi, J.M., Patil, M.B.
Format: Article
Language:English
Subjects:
Computer simulation
Derivation
Devices
Mathematical models
Moment methods
MOSFETs
Semiconductor device modeling
Semiconductor-insulator interfaces
Variational methods
Very high frequencies
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Summary:We present a new approach to model nonquasi-static (NQS) effects in a MOSFET in a small-signal situation. The model derived here is based on the large-signal NQS model previously proposed. The derivation of the small-signal model is presented. The small-signal parameters obtained with this model prove to be accurate up to very high frequencies. An excellent match between the new model and device simulation results has been observed even when the frequency is many times larger than the cutoff frequency.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.819054