Graphene Packaging for Thermal Management of Innovative Complementary Collector-Up Heterojunction Bipolar Transistors

This exploration emphasizes the juxtaposition of thermal stability in InGaP/GaAs p-n-p and n-p-n collector-up (C-up) heterojunction bipolar transistors (HBTs), and specially for the performance-matched complementary wireless applications under extreme operations. High-quality graphene packaging, ben...

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Bibliographic Details
Published in:IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2018-11, Vol.8 (11), p.1923-1927
Main Authors: Du, Wei-Min, Tseng, H. C.
Format: Article
Language:English
Subjects:
Gallium arsenide
Graded base
Graphene
graphene packaging
Heterojunction bipolar transistors
heterojunction bipolar transistors (HBTs)
Indium gallium arsenides
Innovations
nonuniform collector
Packaging
Semiconductor devices
Substrates
thermal
Thermal management
Thermal resistance
Thermal stability
Transistors
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Summary:This exploration emphasizes the juxtaposition of thermal stability in InGaP/GaAs p-n-p and n-p-n collector-up (C-up) heterojunction bipolar transistors (HBTs), and specially for the performance-matched complementary wireless applications under extreme operations. High-quality graphene packaging, beneath the graded InGaAs base and the nonuniform collector of C-up HBTs, is proposed. Significantly, the multifinger devices achieved compeling high speed and heat dissipation. The results show that the reasonably matched performance has been exhibited, and a remarkable improvement in the surface temperature rise is attained. Due to the effective alleviation of adverse feedback phenomena by using this innovation, a better thermal stability in the p-n-p device than in the n-p-n device has been evidently observed.
ISSN:2156-3950
2156-3985
DOI:10.1109/TCPMT.2018.2875768