Design and Analysis of Ultra-High-Speed Near-Ballistic Uni-Traveling-Carrier Photodiodes Under a 50- \Omega Load for High-Power Performance

We demonstrate a near-ballistic uni-traveling-carrier photodiode (NBUTC-PD) with a scaled-down epi-layer structure designed for high-power performance in the sub-THz frequency regime. Compared with UTC-PDs, NBUTC-PDs offer a higher optimum bias voltage for the near-ballistic transport of electrons,...

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Bibliographic Details
Published in:IEEE photonics technology letters 2012-04, Vol.24 (7), p.533-535
Main Authors: Jin-Wei Shi, Feng-Ming Kuo, Bowers, John E.
Format: Article
Language:English
Subjects:
Bandwidth
Equations
Frequency measurement
High-power photodiode
Indium phosphide
Photodiodes
photonic transmitter
Power generation
Power measurement
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Summary:We demonstrate a near-ballistic uni-traveling-carrier photodiode (NBUTC-PD) with a scaled-down epi-layer structure designed for high-power performance in the sub-THz frequency regime. Compared with UTC-PDs, NBUTC-PDs offer a higher optimum bias voltage for the near-ballistic transport of electrons, which leads to improvement in the output power performance. Furthermore, a small load resistance (
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2011.2179795