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C- and L-Band External Cavity Wavelength Tunable Lasers Utilizing a Wideband SOA With Coupled Quantum Well Active Layer

We have developed a wideband semiconductor optical amplifier as a gain chip for a C - and L -band external cavity tunable laser. We introduced a coupled quantum well structure to obtain gain spectrum covering both bands. Low threshold current deviation, over 13-dBm fiber coupled power, and high side...

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Bibliographic Details
Published in:IEEE photonics technology letters 2008-09, Vol.20 (17), p.1506-1508
Main Authors: Sudo, S., Mizutani, K., Okamoto, T., Tsuruoka, K., Sato, K., Kudo, K.
Format: Article
Language:English
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Summary:We have developed a wideband semiconductor optical amplifier as a gain chip for a C - and L -band external cavity tunable laser. We introduced a coupled quantum well structure to obtain gain spectrum covering both bands. Low threshold current deviation, over 13-dBm fiber coupled power, and high sidemode suppression ratio were demonstrated across a 77-nm tuning range.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.928086