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C- and L-Band External Cavity Wavelength Tunable Lasers Utilizing a Wideband SOA With Coupled Quantum Well Active Layer
We have developed a wideband semiconductor optical amplifier as a gain chip for a C - and L -band external cavity tunable laser. We introduced a coupled quantum well structure to obtain gain spectrum covering both bands. Low threshold current deviation, over 13-dBm fiber coupled power, and high side...
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Published in: | IEEE photonics technology letters 2008-09, Vol.20 (17), p.1506-1508 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We have developed a wideband semiconductor optical amplifier as a gain chip for a C - and L -band external cavity tunable laser. We introduced a coupled quantum well structure to obtain gain spectrum covering both bands. Low threshold current deviation, over 13-dBm fiber coupled power, and high sidemode suppression ratio were demonstrated across a 77-nm tuning range. |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2008.928086 |