Experimental Investigation of Resistive-Reactive Class-J Mode Using Time-Domain Low-Frequency Active Harmonic Load-Pull Measurements

In this letter, the intrinsic current and voltage waveforms of a power transistor are measured by using a time-domain low-frequency (LF) active harmonic load-pull (LP) system. The measured waveforms are used to study the device's behavior under loading conditions corresponding to the impedance...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2022-01, Vol.32 (1), p.96-99
Main Authors: Molina-Cesena, Marlon, Reynoso-Hernandez, J. Apolinar, Pulido-Gaytan, M. A., Loo-Yau, J. R., Maya-Sanchez, M. C.
Format: Article
Language:English
Subjects:
Class-J mode
Current measurement
Harmonic analysis
harmonic load–pull (LP)
low frequency (LF)
power amplifier (PA)
Power generation
Power semiconductor devices
Radio frequency
resistive–reactive (R-R)
Time domain analysis
Transistors
Voltage measurement
Waveforms
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Summary:In this letter, the intrinsic current and voltage waveforms of a power transistor are measured by using a time-domain low-frequency (LF) active harmonic load-pull (LP) system. The measured waveforms are used to study the device's behavior under loading conditions corresponding to the impedance design space of the resistive-reactive (R-R) class-J modes. From experimental data of a 10-W GaN-HEMT packaged transistor, the device's drain efficiency and output power have been measured and compared with those expected from the theory of the R-R class-J modes. This letter describes and demonstrates the capabilities of time-domain LF active harmonic load-pull measurements to experimentally study the R-R class-J modes.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2021.3113289