On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors

The objective of this letter oriented toward micro-wave measurement of high-impedance devices using a conventional on-wafer probe station is multiple. First, we provided a quantification of the measurement uncertainty inherent to the setup when measuring capacitors in the range of 0.01-10 fF using b...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2018-09, Vol.28 (9), p.831-833
Main Authors: Daffe, K., Dambrine, G., Durand, C., Gaquiere, C., Haddadi, K.
Format: Article
Language:English
Subjects:
Broadband
Capacitance
Capacitance measurement
Capacitors
Configurations
Coplanar waveguide
Electric potential
Engineering Sciences
measurement accuracy
Measurement uncertainty
Micro and nanotechnologies
Microelectronics
Microwave measurement
on-wafer calibration
Probes
Reflection
sub-fF MOS varactor
two-port measurement
Uncertainty
Variations
vector network analyzer (VNA)
Voltage measurement
Wave measurement
Citations: Items that this one cites
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Summary:The objective of this letter oriented toward micro-wave measurement of high-impedance devices using a conventional on-wafer probe station is multiple. First, we provided a quantification of the measurement uncertainty inherent to the setup when measuring capacitors in the range of 0.01-10 fF using both the reflection and transmission methods up to 50 GHz. In particular, we demonstrate a clear improvement when using the transmission method in series-through configuration. As a practical demonstration, on-wafer MOS voltage-tunable capacitors with capacitances ranging from 0.85 to 1.15 fF are extracted with uncertainties of 130 and 2 aF, respectively, for both reflection and transmission measurements at 10 GHz. Capacitance fluctuation related to the technological process on the order of 20 aF is then exemplary demonstrated using the series-through configuration.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2018.2851386