Uncovering the Anisotropic Electronic Structure of 2D Group VA-VA Monolayers for Quantum Transport

Two-dimensional (2D) materials with anisotropic electronic structures possess promising prospect for ultra-scaled field effect transistors (FETs), such as black phosphorene. Here, the quantum transport properties of anisotropic 2D group VA-VA monolayers with puckered configuration are studied in 5 n...

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Bibliographic Details
Published in:IEEE electron device letters 2021-01, Vol.42 (1), p.66-69
Main Authors: Qu, Hengze, Guo, Shiying, Zhou, Wenhan, Zhang, Shengli
Format: Article
Language:English
Subjects:
2D group VA-VA monolayer
anisotropic electronic structure
Density functional theory
Doping
Effective mass
Electronic devices
Electronic structure
Field effect transistors
first principles calculation
Fitting
Monolayers
MOSFET
Performance evaluation
Phosphorene
Quantum transport
Semiconductor devices
Transport properties
transport property
Tunneling
Two dimensional displays
Two dimensional materials
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Summary:Two-dimensional (2D) materials with anisotropic electronic structures possess promising prospect for ultra-scaled field effect transistors (FETs), such as black phosphorene. Here, the quantum transport properties of anisotropic 2D group VA-VA monolayers with puckered configuration are studied in 5 nm FETs using density functional theory and nonequilibrium Green's function. Through evaluating and comparing the transport effective mass ( \text{m}_{x} ) and density of state ( \text{m}_{\text {DOS}} ) of these 2D group VA-VA monolayers, we uncover the physical mechanism of the anisotropic electronic structures for the performances of 2D ultra-short FETs. These electronic structures can make the channel with a small \text{m}_{x} hold a high \text{m}_{\text {DOS}} , or the channel with heavy \text{m}_{x} hold a small \text{m}_{\text {DOS}} , which is beneficial to obtain high saturation current, steep sub-threshold swing, and thus a high on-current. Hence, the strong anisotropic electronic structure can be regarded as a target feature for designing high performance 2D FETs, which provides a guideline for exploring excellent 2D channels for ultra-scaled electronic devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.3041657