Gate-controllable electronic trap detection in dielectrics

Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance-voltage (CV) curve as well as flatband voltage (VFB) measure in

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Bibliographic Details
Published in:IEEE electron device letters 2020-05, Vol.41 (5), p.1-1
Main Authors: Mondal, Sandip, Paul, Tathagata, Ghosh, Arindam, Venkataraman, V.
Format: Article
Language:English
Subjects:
Conduction bands
Dielectric measurement
Dielectrics
Electric potential
Electron traps
Electronic traps
Energy distribution
energy level (EIL)
Energy levels
Hafnium compounds
Hafnium oxide
Logic gates
metal insulator semiconductor (MIS)
Semiconductor device measurement
Silicon
silicon conduction band (Si ECB)
Voltage
Zirconium dioxide
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Description
Summary:Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance-voltage (CV) curve as well as flatband voltage (VFB) measure in
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2985292