Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination

In this work, small-angle beveled-mesa termination technique was developed in GaN p-i-n power diodes for high avalanche performances. With effective alleviation of electric field crowding effect at the junction sidewall, near uniform distribution of avalanche breakdown was realized. Resultantly, sta...

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Bibliographic Details
Published in:IEEE electron device letters 2020-03, Vol.41 (3), p.469-472
Main Authors: Nie, Kai-Wen, Xu, Wei-Zong, Ren, Fang-Fang, Zhou, Dong, Pan, Dan-Feng, Ye, Jian-Dong, Chen, Dun-Jun, Zhang, Rong, Zheng, You-Dou, Lu, Hai
Format: Article
Language:English
Subjects:
Avalanche breakdown
Avalanche diodes
avalanche ruggedness
Breakdown
Electric fields
Electron avalanche
Gallium nitride
Gallium nitrides
GaN p-i-n power diode
inductive current sustaining capability
Junctions
P-i-n diodes
PIN photodiodes
Ruggedness
Schottky diodes
shallow bevel termination
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Summary:In this work, small-angle beveled-mesa termination technique was developed in GaN p-i-n power diodes for high avalanche performances. With effective alleviation of electric field crowding effect at the junction sidewall, near uniform distribution of avalanche breakdown was realized. Resultantly, state-of-the-art inductive avalanche current density of ~31.5 kA/cm 2 and average parallel-plane breakdown electric field of 2.86 MV/cm was achieved in the terminated diodes. Meanwhile, ruggedness of the avalanche breakdown has also been evidently promoted, under both repetitive dc reverse breakdown stresses and unclamped inductive switch conditions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2970552