Loading…

Determining Phosphor Temperature in Light-Emitting Diode Based on Divisional Normalized Emission Power

We propose a non-contact method for determining phosphor/silicone temperature (phosphor temperature) in phosphor-coated light-emitting diode (pc-LED). The pc-LED with a surface mounted device (SMD) structure is primarily consisted of InGaN/GaN blue LED chip, (Sr,Ca)AlSiN3:Eu 2+ red rare-earth phosph...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2019-10, Vol.40 (10), p.1650-1653
Main Authors: Lin, Yi, Kang, Pin-Chun, Chen, Jie, Zhu, Li-Hong, Lu, Yi-Jun, Guo, Zi-Quan, Chen, Zhong, Huang, Jia-En, Gao, Yang, Gao, Yu-Lin, Chen, Guo-Long, Yang, Chen, Li, Zhi-Hui, Lei, Shuo-Di, Ruan, Yu-Jiao
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We propose a non-contact method for determining phosphor/silicone temperature (phosphor temperature) in phosphor-coated light-emitting diode (pc-LED). The pc-LED with a surface mounted device (SMD) structure is primarily consisted of InGaN/GaN blue LED chip, (Sr,Ca)AlSiN3:Eu 2+ red rare-earth phosphor, and transparent dimethyl silicone. This proposed method is basically based on a linear temperature dependence of divisional normalized emission power for phosphor/silicone mixture. Four types of pc-LED corresponding to four different phosphor concentrations are examined by proposed method. A comparison of measured results between micro-thermocouple device and proposed method has also been carried out, showing a fairly good agreement between them, except for pc-LED with 4.8 wt% phosphor concentration. We suggest that this proposed method can provide a useful tool for further study of optical and thermal characteristics in pc-LED.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2933647