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Determining Phosphor Temperature in Light-Emitting Diode Based on Divisional Normalized Emission Power
We propose a non-contact method for determining phosphor/silicone temperature (phosphor temperature) in phosphor-coated light-emitting diode (pc-LED). The pc-LED with a surface mounted device (SMD) structure is primarily consisted of InGaN/GaN blue LED chip, (Sr,Ca)AlSiN3:Eu 2+ red rare-earth phosph...
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Published in: | IEEE electron device letters 2019-10, Vol.40 (10), p.1650-1653 |
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Main Authors: | , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We propose a non-contact method for determining phosphor/silicone temperature (phosphor temperature) in phosphor-coated light-emitting diode (pc-LED). The pc-LED with a surface mounted device (SMD) structure is primarily consisted of InGaN/GaN blue LED chip, (Sr,Ca)AlSiN3:Eu 2+ red rare-earth phosphor, and transparent dimethyl silicone. This proposed method is basically based on a linear temperature dependence of divisional normalized emission power for phosphor/silicone mixture. Four types of pc-LED corresponding to four different phosphor concentrations are examined by proposed method. A comparison of measured results between micro-thermocouple device and proposed method has also been carried out, showing a fairly good agreement between them, except for pc-LED with 4.8 wt% phosphor concentration. We suggest that this proposed method can provide a useful tool for further study of optical and thermal characteristics in pc-LED. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2019.2933647 |