A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches

A new method of accurately measuring the photoconductive performance of photoconductive semiconductor switch (PCSS) was proposed. By this method, we succeeded extracting the photoconductivity of 4H-SiC substrate free from the obstruction of parasitic inductance in the test circuit. Photoconductive p...

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Bibliographic Details
Published in:IEEE electron device letters 2019-02, Vol.40 (2), p.271-274
Main Authors: Han, Wei-Wei, Huang, Wei, Zhuo, Shi-Yi, Xin, Jun, Liu, Xue-Chao, Shi, Er-Wei, Zhang, Yue-Fan, Cao, Peng-Hui, Wang, Yu-Tian, Guo, Hui, Zhang, Yu-Ming
Format: Article
Language:English
Subjects:
Density measurement
Electrical resistance measurement
Inductance
intrinsic photoconductivity
on-state resistance
Optical switches
Photoconductive switch
Photoconductivity
Power system measurements
pulse-power system switches
Resistance
Silicon carbide
Substrates
Switches
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Summary:A new method of accurately measuring the photoconductive performance of photoconductive semiconductor switch (PCSS) was proposed. By this method, we succeeded extracting the photoconductivity of 4H-SiC substrate free from the obstruction of parasitic inductance in the test circuit. Photoconductive performance of the PCSS was precisely measured, where a maximum ON-state photoconductivity of 6.26\,\,(\Omega \cdot \text {m})^{-1} , a minimum ON-state resistivity of 0.16~\Omega \cdot \text {m} , and an accurate minimum resistance of 1.71~\Omega were obtained for SiC substrate. The quantitative relationship between the ON-state resistance and the reciprocal of area of laser trigger region was proved. The performance of PCSSs can be continuously adjusted to adapt different application requirements just by changing the area of laser excitation region.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2885787