Transistor-Less Logic Circuits Implemented With 2-D Charge Density Wave Devices

We propose logic gates and circuits implemented with 2-D charge density wave (CDW) devices, which operate at room temperature. The 1T-TaS 2 charge density wave devices exhibit a voltage triggered phase transition between the nearly commensurate and incommensurate CDW states, which is accompanied by...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2018-09, Vol.39 (9), p.1449-1452
Main Authors: Khitun, Alexander G., Geremew, Adane K., Balandin, Alexander A.
Format: Article
Language:English
Subjects:
charge density wave devices
Charge density waves
Computer simulation
Current voltage characteristics
Field programmable gate arrays
Gates
Integrated circuit modeling
Inverters
Logic circuits
Logic gates
Mathematical models
Numerical models
Phase transitions
radiation hardness
Resistance
Resistors
Semiconductor devices
Switches
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We propose logic gates and circuits implemented with 2-D charge density wave (CDW) devices, which operate at room temperature. The 1T-TaS 2 charge density wave devices exhibit a voltage triggered phase transition between the nearly commensurate and incommensurate CDW states, which is accompanied by an abrupt change of the resistance and hysteresis. The unique output characteristics of such devices allow for building logic gates and circuits without any transistors. Using the experimentally measured current-voltage characteristics, we model and numerically simulate the performance of the inverter and the OR logic gates consisting of CDW devices and regular resistors. Owing to the radiation-hard nature of the CDW devices and absence of transistors, the proposed circuits can be utilized in various harsh environments on earth or outer space.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2858244