Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET Performance by Reducing Depletion Region Trap Density

In this letter, we investigated the effect of magnetron cathode current (I c ) during reactive sputtering of In-Ga-Zn-O (a-IGZO) channel layer on properties of metal-semiconductor field-effect transistors with Ru-Si-O Schottky gate electrode. One can observe that as I c increased from 90 to 150 mA c...

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Bibliographic Details
Published in:IEEE electron device letters 2015-05, Vol.36 (5), p.469-471
Main Authors: Kaczmarski, Jakub, Grochowski, Jakub, Kaminska, Eliana, Taube, Andrzej, Borysiewicz, Michal A., Pagowska, Karolina, Jung, Wojciech, Piotrowska, Anna
Format: Article
Language:English
Subjects:
a-IGZO
Cathodes
Integrated circuits
Logic gates
MESFET
MESFETs
Ru-Si-O
Schottky barrier
Schottky barriers
TAOS
transparent amorphous oxide semiconductors
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Summary:In this letter, we investigated the effect of magnetron cathode current (I c ) during reactive sputtering of In-Ga-Zn-O (a-IGZO) channel layer on properties of metal-semiconductor field-effect transistors with Ru-Si-O Schottky gate electrode. One can observe that as I c increased from 90 to 150 mA channel mobility (μ ch ) and subthreshold swing (S) improved from μch = 7.5 cm 2 /V·s and S = 580 V/dec to μch = 8.8 cm 2 /V ·s and S = 420 V/dec, respectively. This enhancement in transistors performance was attributed to the reduction of charge density in the depletion region of Ru-Si-O/In-Ga-Zn-O Schottky contacts, which we assigned to the densification of a-IGZO films fabricated at higher I c .
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2411749