Optoelectronic Mixer Based on Graphene FET

We present optoelectronic mixing phenomenon in graphene FET (GFET) and give a brief analysis for the first time. Demonstrated by a measurement system, two operating modes of optoelectronic mixer (OE-mixer) circuits are proposed, either of them mixing optical and electrical signals directly using a s...

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Bibliographic Details
Published in:IEEE electron device letters 2015-03, Vol.36 (3), p.253-255
Main Authors: Mao, Xurui, Cheng, Chantong, Huang, Beiju, Zhang, Zan, Gan, Sheng, Chen, Hongmei, Chen, Hongda
Format: Article
Language:English
Subjects:
Detectors
FETs
Field effect transistors
Graphene
Impedance
Logic gates
mixer
Mixers
optoelectronic
Photoconductivity
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Summary:We present optoelectronic mixing phenomenon in graphene FET (GFET) and give a brief analysis for the first time. Demonstrated by a measurement system, two operating modes of optoelectronic mixer (OE-mixer) circuits are proposed, either of them mixing optical and electrical signals directly using a single GFET. Optoelectronic conversion losses of 24 and 35 dB are obtained in a 50-Ω impedance system, respectively. GFET OE-mixer might be of strong importance for radio over fiber systems, millimeter wave, and terahertz frequencies applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2396038