Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

Low thermal resistance GaN-on-diamond wafers offer enhanced thermal management with respect to GaN-on-SiC devices. The GaN/diamond interfacial thermal resistance can contribute significantly to the total device thermal resistance and must therefore be minimized to gain the maximum benefit from GaN-o...

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Bibliographic Details
Published in:IEEE electron device letters 2014-10, Vol.35 (10), p.1007-1009
Main Authors: Pomeroy, James W., Simon, Roland Baranyai, Huarui Sun, Francis, Daniel, Faili, Firooz, Twitchen, Daniel J., Kuball, Martin
Format: Article
Language:eng
Subjects:
AlGaN/GaN
diamond
Diamonds
Dielectrics
Electrical resistance measurement
Gallium nitride
HEMTs
Temperature measurement
thermal management
Thermal resistance
thermoreflectance
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Summary:Low thermal resistance GaN-on-diamond wafers offer enhanced thermal management with respect to GaN-on-SiC devices. The GaN/diamond interfacial thermal resistance can contribute significantly to the total device thermal resistance and must therefore be minimized to gain the maximum benefit from GaN-on-diamond. A contactless thermoreflectance measurement technique has been developed, which can be used after wafer growth and before device fabrication, enabling rapid feedback about the influence of growth parameters on interfacial thermal resistance. A measured 2× reduction in the GaN/diamond interfacial resistance is achieved by reducing the dielectric thickness between the GaN and diamond from 90 to 50 nm, enabling a potential 25% increase in transistor power dissipation for GaN-on-diamond.
ISSN:0741-3106
1558-0563