Enhancement-Mode Buried-Channel \hbox \hbox\hbox\hbox\hbox MOSFETs With High- \kappa Gate Dielectrics

The operation of long- and short-channel enhancement-mode \hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As} -channel MOSFETs with high- \kappa gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 \mu\hbox{m} , the long-channel devi...

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Bibliographic Details
Published in:IEEE electron device letters 2007-06, Vol.28 (6), p.473-475
Main Authors: Sun, Yanning, Kiewra, E. W., Koester, S. J., Ruiz, N., Callegari, A., Fogel, K. E., Sadana, D. K., Fompeyrine, J., Webb, D. J., Locquet, J.-P., Sousa, M., Germann, R., Shiu, K. T., Forrest, S. R.
Format: Article
Language:English
Subjects:
Buried channel
Dielectrics
enhancement mode
HEMTs
high- kappa
Indium gallium arsenide
Indium phosphide
InGaAs
Logic devices
MODFETs
Molecular beam epitaxial growth
MOSFET
MOSFETs
Sun
Ultra large scale integration
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Summary:The operation of long- and short-channel enhancement-mode \hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As} -channel MOSFETs with high- \kappa gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 \mu\hbox{m} , the long-channel devices have V_{t} = + \hbox{0.25}\ \hbox{V} , a subthreshold slope of 150 mV/dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100 \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s} . For a gate length of 260 nm, the short-channel devices have V_{t} = + \hbox{0.5}\ \hbox{V} and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.896813