A model for gate-oxide breakdown in CMOS inverters

The effect of oxide breakdown (BD) on the performance of CMOS inverters has been investigated. The results show that the inverter performance can be affected by the BD in a different way depending on the stress polarity applied to the inverter input. In all the cases, the oxide BD conduction has bee...

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Bibliographic Details
Published in:IEEE electron device letters 2003-02, Vol.24 (2), p.114-116
Main Authors: Rodriguez, R., Stathis, J.H., Linder, B.P.
Format: Article
Language:English
Subjects:
Breakdown
Capacitors
Circuits
CMOS
Dielectric breakdown
Digital circuits
Diodes
Electric breakdown
Inverters
Leakage current
Mathematical models
Oxides
Polarity
Semiconductor device modeling
Silicon on insulator technology
Stress
Voltage
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Summary:The effect of oxide breakdown (BD) on the performance of CMOS inverters has been investigated. The results show that the inverter performance can be affected by the BD in a different way depending on the stress polarity applied to the inverter input. In all the cases, the oxide BD conduction has been modeled as gate-to-diffusion leakage with a power-law formula of the type I=KV/sup p/, which was previously found to describe the BD in capacitor structures. This implies that the BD physics at oxide level is the same as that at circuit level.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.808155