Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 \mum diffusion apertures is used to engineer the Zn diffusion profile to suppress premature edge breakdown. The dev...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2022-09, Vol.28 (5: Lidars and Photonic Radars), p.1-9
Main Authors: Kizilkan, Ekin, Karaca, Utku, Pesic, Vladimir, Lee, Myung-Jae, Bruschini, Claudio, SpringThorpe, Anthony J., Walker, Alexandre W., Flueraru, Costel, Pitts, Oliver J., Charbon, Edoardo
Format: Article
Language:English
Subjects:
3-D ranging
Avalanche diodes
Bias
Diffusion
Electric breakdown
Electric fields
III-V
III-V semiconductor materials
Indium phosphide
Indium phosphides
InGaAs/InP
LIDAR
Performance evaluation
Photon avalanches
photon counting
Photons
Quantum phenomena
Room temperature
Single-photon avalanche diodes
single-photon avalanche diodes (SPADs)
time-correlated single-photon counting (TCSPC)
Timing jitter
Vibration
Zinc
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Summary:This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 \mum diffusion apertures is used to engineer the Zn diffusion profile to suppress premature edge breakdown. The device achieves a highly uniform active area without the need for shallow diffused guard ring (GR) regions that are inherent in standard InGaAs/InP SPADs. We have obtained 33% and 43% photon detection probability (PDP) at 1550 nm, with 5 V and 7 V excess bias, respectively. These measurements were performed at 300 K and 225 K. The dark count rate (DCR) per unit area at room temperature and at 5 V excess bias is 430 cps/\mum^{2} and it decreases to 5 cps/\mum^{2} at 225 K. Timing jitter is measured with passive quenching at 1550 nm as 149 ps at full-width-at-half-maximum (FWHM), (300 K, 5 V excess bias). The proposed technology is suitable for a number of applications, including optical time-domain reflectometry (OTDR), quantum information, and light detection and ranging (LiDAR).
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2022.3162527