Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers

The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3-/spl mu/m lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Exper...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2005-09, Vol.11 (5), p.1063-1068
Main Authors: Shterengas, L., Belenky, G.L., Jeng-Ya Yeh, Mawst, L.J., Tansu, N.
Format: Article
Language:English
Subjects:
Chemical lasers
Diode lasers
Electrons
Gallium arsenide
Laser modes
Lasers
Nitrogen
Optical waveguides
Quantum well lasers
Semiconductor lasers
Waveguide lasers
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Summary:The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3-/spl mu/m lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the range 1.7-2.5 for /spl lambda/=1.22--1.34 /spl mu/m dilute-nitride GaAs-based lasers. Differential gain and index with respect to either current or carrier concentration are reduced in dilute-nitride devices.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2005.853736