System-Level Sensitivity Analysis of SiNW-bioFET-Based Biosensing Using Lock-In Amplification

Although silicon nanowire biological field-effect transistors (SiNW-bioFETs) have steadily demonstrated their ability to detect biological markers at ultra-low concentration, they have not yet translated into routine diagnostics applications. One of the challenges inherent to the technology is that...

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Bibliographic Details
Published in:IEEE sensors journal 2017-10, Vol.17 (19), p.6295-6311
Main Authors: Patou, Francois, Dimaki, Maria, Kjargaard, Claus, Madsen, Jan, Svendsen, Winnie E.
Format: Article
Language:English
Subjects:
Biological effects
Biology
Biomarkers
Biosensors
Design
diagnostics
Field effect transistors
instrumentation
Instruments
lock-in amplification
Logic gates
Mathematical analysis
Nanowires
Noise sensitivity
Semiconductor devices
Sensitivity
Sensitivity analysis
Silicon
SiNW-bioFET
Specifications
system analysis
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Summary:Although silicon nanowire biological field-effect transistors (SiNW-bioFETs) have steadily demonstrated their ability to detect biological markers at ultra-low concentration, they have not yet translated into routine diagnostics applications. One of the challenges inherent to the technology is that it requires an instrumentation capable of recovering ultra-low signal variations from sensors usually designed and operated in a highly resistive configuration. Often overlooked, the SiNW-bioFET/instrument interactions are yet critical factors in determining overall system biodetection performances. Here, we carry out, for the first time, the system-level sensitivity analysis of a generic SiNW-bioFET model coupled to a custom-design instrument based on the lock-in amplifier. By investigating a large parametric space spanning over both sensor and instrumentation specifications, we demonstrate that system-wide investigations can be instrumental in identifying the design trade-offs that will ensure the lowest limits of detection. The generic character of our analytical model allows us to elaborate on the most general SiNW-bioFET/instrument interactions and their overall implications on detection performances. Our model can be adapted to better match specific sensor or instrument designs to either ensure that ultra-high sensitivity SiNW-bioFETs are coupled with an appropriately sensitive and noise-rejecting instrumentation, or to best tailor SiNW-bioFET design to the specifications of an existing instrument.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2017.2742018