A Low Noise Wide Dynamic Range CMOS Image Sensor With Low-Noise Transistors and 17b Column-Parallel ADCs

An extremely low temporal noise and wide dynamic range CMOS image sensor is developed using low-noise transistors and high gray-scale resolution (17b) folding-integration/cyclic analog-to-digital converter (ADC). Two types of pixel are designed. One is a high conversion gain (HCG) pixel with removin...

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Bibliographic Details
Published in:IEEE sensors journal 2013-08, Vol.13 (8), p.2922-2929
Main Authors: Min-Woong Seo, Sawamoto, Takehide, Akahori, Tomoyuki, Iida, Tetsuya, Takasawa, Taishi, Yasutomi, Keita, Kawahito, Shoji
Format: Article
Language:English
Subjects:
CMOS
CMOS image sensor (CIS)
Digital cameras
Dynamic range
folding-integration/cyclic analog-to-digital (A/D) converter (ADC)
high conversion gain
low noise
Noise
Pixels
Product introduction
Semiconductor devices
Sensors
Transistors
wide dynamic range
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Summary:An extremely low temporal noise and wide dynamic range CMOS image sensor is developed using low-noise transistors and high gray-scale resolution (17b) folding-integration/cyclic analog-to-digital converter (ADC). Two types of pixel are designed. One is a high conversion gain (HCG) pixel with removing the coupling capacitance between the transfer gate and the floating diffusion, and the other is a pixel for wide dynamic range (WDR) CMOS imager with a native transistor as a source follower amplifier. The CMOS image sensor that is in combination with the proposed pixels and the high performance column ADC has achieved a low pixel temporal noise of 1.1e rms - , a wide dynamic range of 87.5 dB with the video rate operation (30 Hz) and the vertical fixed pattern noise of 1.08-μVrms. The implemented HCG CMOS imager and WDR CMOS imager using 0.18 μm technology have the pixel conversion gain of 73.2- and 22.8-μV/e - , respectively.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2013.2264483