Photodetection With Gate-Controlled Lateral BJTs From Standard CMOS Technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS...

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Bibliographic Details
Published in:IEEE sensors journal 2013-05, Vol.13 (5), p.1554-1563
Main Authors: Campos, F. S., Faramarzpour, N., Marinov, O., Deen, M. J., Swart, J. W.
Format: Article
Language:English
Subjects:
Active pixel sensor
CMOS integrated circuits
complementary-metal-oxide semiconductor (CMOS) image sensor
gated-controlled lateral phototransistor
high dynamic range phototransistor
high responsivity photodetector
Junctions
lateral bipolar junction transistor (BJT)
Logic gates
metal oxide conductor phototransistor
MOSFET circuits
Photoconductivity
Photodetectors
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Summary:The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 10 6 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ~ 500 μm 2 are used. When using this area, the responsivities are 16-20 kA/W.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2012.2235827