InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers

We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ult...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2011-08, Vol.47 (8), p.1107-1112
Main Authors: Lee, Kai-Hsuan, Chang, Ping-Chuan, Chang, Shoou-Jinn, Wu, San-Lein
Format: Article
Language:English
Subjects:
Aluminum nitride
Current measurement
Gallium nitride
Indium gallium nitrides
InGaN
Leakage current
Low noise
Noise
Photodetectors
Quantum electronics
Rejection
Schottky barriers
Temperature measurement
Transport
Tunneling
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Summary:We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2011.2158389