High-efficiency GaInAs Microwave MISFET's

GaInAs metal-insulator-semiconductor FET's (MISFET's) fabricated with a self-aligned-gate process and 1-µm gate lengths gave power outputs as high as 857 (1.53), 424 (0.76), 415 (0.74), and 114 mW (0.20 W/mm) at 4, 12, 20 and 32.5 GHz, respectively. Power-added efficiencies of 64.3 and 55....

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Bibliographic Details
Published in:IEEE electron device letters 1987-09, Vol.8 (9), p.443-446
Main Authors: Gardner, P.D., Bechtle, D., Narayan, S.Y., Colvin, S.D., Paczkowski, J.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Fabrication
Gallium arsenide
Indium phosphide
Metal-insulator structures
Metallization
Microwave devices
Microwave FETs
MISFETs
Scattering parameters
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Transistors
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Summary:GaInAs metal-insulator-semiconductor FET's (MISFET's) fabricated with a self-aligned-gate process and 1-µm gate lengths gave power outputs as high as 857 (1.53), 424 (0.76), 415 (0.74), and 114 mW (0.20 W/mm) at 4, 12, 20 and 32.5 GHz, respectively. Power-added efficiencies of 64.3 and 55.0 percent were obtained at 4 and 12 GHz, respectively. At 20 GHz, a power-added efficiency of 32.5 percent was obtained. The value of f_{\max} calculated from measured scattering parameters (S parameters) was ∼ 45 GHz. This high cutoff frequency was validated by the measured performance at 32.5 GHz. We believe this to be the best microwave performance reported for GaInAs power transistors. A self-aligned-gate process, essential for minimizing gate overlap capacitances while maintaining a full-gate structure, that offers the potential for Submicrometer gate-length device fabrication is described.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26687