1-mW CW-RT monolithic VCSEL at 1.55 μm

We demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 μm using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two original approach...

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Bibliographic Details
Published in:IEEE photonics technology letters 1999-06, Vol.11 (6), p.629-631
Main Authors: Boucart, J., Starck, C., Gaborit, F., Plais, A., Bouche, N., Derouin, E., Goldstein, L., Fortin, C., Carpentier, D., Salet, P., Brillouet, F., Jacquet, J.
Format: Article
Language:English
Subjects:
Current injection
Emittance
Fiber lasers
Gas lasers
Holes
Indium phosphide
Lasers
Mirrors
Molecular beam epitaxy
Molecular structure
Reflectivity
Substrates
Surface emitting lasers
Temperature
Thermal resistance
Tunnel junctions
Vertical cavity surface emission lasers
Vertical cavity surface emitting lasers
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Summary:We demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 μm using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two original approaches. The first originality consists in the growth of a metamorphic GaAs-AlAs Bragg mirror directly on an InP-based cavity. The second novel idea is to use a tunnel junction for current injection. Moreover by using these two approaches the processing is very simple and, therefore, fulfills the goal for low-cost laser production in access and interconnections applications.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.766766