Elementary scattering theory of the Si MOSFET

A simple one-flux scattering theory of the silicon MOSFET is introduced. Current-voltage (I-V) characteristics are expressed in terms of scattering parameters rather than a mobility. For long-channel transistors, the results reduce to conventional drift-diffusion theory, but they also apply to devic...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 1997-07, Vol.18 (7), p.361-363
Main Author: Lundstrom, M.
Format: Article
Language:English
Subjects:
Backscatter
Bipolar transistors
Electrons
MOSFET circuits
Scattering parameters
Silicon
Steady-state
Surface treatment
Threshold voltage
Transconductance
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A simple one-flux scattering theory of the silicon MOSFET is introduced. Current-voltage (I-V) characteristics are expressed in terms of scattering parameters rather than a mobility. For long-channel transistors, the results reduce to conventional drift-diffusion theory, but they also apply to devices in which the channel length is comparable to or even shorter than the mean-free-path. The results indicate that for very short channels the transconductance is limited by carrier injection from the source. The theory also indicates that evaluation of the drain current in short-channel MOSFETs is a near-equilibrium transport problem, even though the channel electric field is large in magnitude and varies rapidly in space.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.596937