Development of a low noise preamplifier for the detection and position determination of single electrons in a Cerenkov ring imaging detector by charge division

A preamplifier using a low-noise dual-gate MOSFET front end has been designed, built, and tested. It performs well, having a noise level of about 500 electrons RMS at a shaping time of 65 ns. It is linear over its entire range to better than 1%. It has been used to detect single photoelectrons in a...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1988-02, Vol.35 (1), p.231-236
Main Authors: Spencer, E., Coyle, P., Williams, D., Bienz, T., Bird, F., Gaillard, M., Hallewell, G., Kwon, Y.J., Leith, D., McShurley, D., Oxoby, G., Ratcliff, B., Rensing, P., Schultz, D., Shapiro, S., Toge, N., Caldwell, D., Lu, A., Yellin, S., Meadows, B., Nussbaum, M.
Format: Article
Language:English
Subjects:
Calibration
Circuit noise
Detectors
Driver circuits
Electrons
MOSFET circuits
Noise level
Noise shaping
Preamplifiers
Testing
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Summary:A preamplifier using a low-noise dual-gate MOSFET front end has been designed, built, and tested. It performs well, having a noise level of about 500 electrons RMS at a shaping time of 65 ns. It is linear over its entire range to better than 1%. It has been used to detect single photoelectrons in a Cerenkov ring imaging detector. A single channel contains preamp, RC-CR shaper, gain adjustment, driver, and calibration circuitry. The circuit is described in detail, and results of noise and linearity measurements are presented.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.12714