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A 12-ns low-temperature DRAM
A 12-ns access-time 0.5-Mb CMOS DRAM (dynamic random-access memory) operated at liquid-nitrogen temperatures is discussed. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported...
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Published in: | IEEE transactions on electron devices 1989-08, Vol.36 (8), p.1414-1422 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A 12-ns access-time 0.5-Mb CMOS DRAM (dynamic random-access memory) operated at liquid-nitrogen temperatures is discussed. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported measurements of soft error rate (SER) at low temperatures, show that noise, power, and SER do not preclude very high-speed liquid-nitrogen DRAM operation.< > |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/16.30953 |