P-type silicon as hole supplier for nitride-based UVC LEDs

The ineffective p-type doping of nitrides using magnesium (Mg), the best available dopant, has limited the development and performance of all III-nitride-based devices, including bipolar junction transistors and light emitting diodes (LEDs). For nitride-based ultraviolet (UV) LEDs, as the Al composi...

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Bibliographic Details
Published in:New journal of physics 2019-02, Vol.21 (2), p.23011
Main Authors: Cho, Sang June, Liu, Dong, Seo, Jung-Hun, Dalmau, Rafael, Kim, Kwangeun, Park, Jeongpil, Gong, Jiarui, Zhao, Deyin, Wang, Fei, Yin, Xin, Jung, Yei Hwan, Lee, In-Kyu, Kim, Munho, Wang, Xudong, Albrecht, John D., Zhou, Weidong, Moody, Baxter, Ma, Zhenqiang
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum nitride
Aluminum oxide
atomic layer deposition
Bipolar transistors
Buffer layers
Composition
Doping
Gallium nitrides
hole injector
Image quality
Image resolution
Image transmission
Junction transistors
Light emitting diodes
Magnesium
Organic light emitting diodes
Physics
Quantum wells
Semiconductor devices
Silicon
single crystal nanomembrane
transfer printing
tunneling
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Summary:The ineffective p-type doping of nitrides using magnesium (Mg), the best available dopant, has limited the development and performance of all III-nitride-based devices, including bipolar junction transistors and light emitting diodes (LEDs). For nitride-based ultraviolet (UV) LEDs, as the Al composition increases for achieving shorter wavelengths (e.g.
ISSN:1367-2630
1367-2630
DOI:10.1088/1367-2630/ab0445