Ge-doped ZnO nanowire arrays as cold field emitters with excellent performance

Elemental doping is an efficient strategy to modify the electronic and optoelectronic properties of semiconductor materials. In this work, a high-quality Ge-doped tapered ZnO nanowire array was prepared via a simple chemical vapor deposition approach. The I-V and light emission behaviors were invest...

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Bibliographic Details
Published in:Nanotechnology 2019-09, Vol.30 (37), p.375603
Main Author: Liang, Ying
Format: Article
Language:English
Subjects:
chemical vapor deposition
field emission
work function
ZnO nanowires
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Summary:Elemental doping is an efficient strategy to modify the electronic and optoelectronic properties of semiconductor materials. In this work, a high-quality Ge-doped tapered ZnO nanowire array was prepared via a simple chemical vapor deposition approach. The I-V and light emission behaviors were investigated based on a single nanowire with good electrical conductivity. The Kelvin probe force microscopy and ultraviolet photoelectron spectroscopy characterizations indicate that the doped nanowires possess a largely reduced work function relative to that of the pure ZnO nanostructures. These advantages allow Ge-doped ZnO nanowire arrays to deliver excellent field emission performance, including low turn-on and threshold fields, high emission current and long-term stability.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/ab28ca